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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 80 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CH4033ZPT CURRENT 1 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 0.70+0.10 2.0+0.3 * PNP SILICON Transistor 3.5+0.2 7.0+0.3 CONSTRUCTION 0.9+0.2 MARKING * ZEP 0.70+0.10 2.30+0.1 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT 1 3 2 Emitter 3 Collector ( Heat Sink ) 2 Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - Tamb 25 C; note 1 - MIN. MAX. 80 80 5.0 1000 1500 2.0 +150 150 +150 V V V UNIT mA mA W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CH4033ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 5 V IC = -0.1 mA; VCE = 5V IC = 100 mA; VCE = 5V IC = 500 mA; VCE =5V IC = 1.0A; VCE = 5V - - 75 100 70 25 MIN. MAX. 50 10 - 300 - - UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = 150 mA; IB = 15 m A -500 mA; IB = 50 m A IC = IC =150 mA; IB =15 mA -500 mA; IB = 50 m A IC = IE = ie = 0; VCB = 1 0 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz - - - - - - 100 0.15 0.5 0.9 1.1 20 110 - V V V V pF pF MHz VBEsat Cob C ib fT |
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